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SEMICONDUCTOR FTA1015 TECHNICAL DATA B C FEATURES TO-92 PNP Transistor DIM MILLIMETERS A 4.70 MAX E MAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAX G C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Units E 1.00 F 1.27 VCBO Collector-Base Voltage -50 V G 0.85 H 0.45 _ H J 14.00 + 0.50 VCEO Collector-Emitter Voltage -50 V L 2.30 F F M 0.51 MAX VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA 1 2 3 1. EMITTER 2. COLLECTOR PD Collector Power Dissipation 600 mW 3. BASE Tj Junction Temperature 125 Tstg Storage Temperature -55-125 TO-92 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100 A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-b... See More ⇒

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