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S8550G Plastic-Encapsulate Transistors Simplified outline S8550G TRANSISTOR NPN TO-92 Features Power dissipation 1.EMITTER PCM 0.625 W Tamb=25 Collector current 2. COLLECTOR ICM -0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO -40 V Operating and storage junction temperature range TJ Tstg -55 to +150 Electrical Characteristics Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) Ic= -100 A , I =0 -40 V CBO E Ic= -0.1 mA I =0 -25 Collector-emitter breakdown voltage V(BR) B V CEO Emitter-base breakdown voltage V(BR) I = -100 A I =0 -5 V EBO E C Collector cut-off current I V = -40 V , I =0 -0.1 A CBO CB E Collector cut-off current I V = -20 V , I =0 -0.1 A CEO CE B V = - 3 V I =0 Emitter cut-off current ... See More ⇒

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