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View mje13001e1 detailed specification:

MJE13001E1(3DD13001E1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 600 V CBO C E V I =10mA I =0 400 V CEO C B V I =1mA I =0 9.0 V EBO E C I V =600V I =0 0.1 mA CBO CB E I V =400V I =0 0.1 mA CEO CE B I V =9.0V I =0 0.1 mA EBO EB C h V =5.0V I =100mA 10 40 FE CE C V I =100mA I =20mA 0.5 V CE(sat) C B V I =100mA I =20mA 1.2 V BE(sat) C... See More ⇒

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