View mje13003e1 detailed specification:
MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 450 V CEO V 9 V EBO I 0.45 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 700 V CBO C E V I =10mA I =0 450 V CEO C B V I =1mA I =0 9 V EBO E C I V =700V I =0 0.1 mA CBO CB E I V =450V I =0 0.1 mA CEO CE B I V =9.0V I =0 0.1 mA EBO EB C h V =5.0V I... See More ⇒
Keywords - ALL TRANSISTORS SPECS
mje13003e1.pdf Design, MOSFET, Power
mje13003e1.pdf RoHS Compliant, Service, Triacs, Semiconductor
mje13003e1.pdf Database, Innovation, IC, Electricity
