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View mje13009z9 detailed specification:

MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j T -55 150 stg /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 700 V CBO C E V I =10mA I =0 400 V CEO C B V I =1mA I =0 9.0 V EBO E C I V =700V I =0 0.1 mA CBO CB E I V =400V I =0 0.1 mA CEO CE B I V =9.0V I =0 0.1 mA EBO EB C h V =5.0V I =5.0A 10 40 FE CE C V I =8.0A I =1.6A 1.2 V CE(sat) C B V I =8.0A I =1.6A 1.6... See More ⇒

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