All Transistors. Equivalents Search

View mrf18085a detailed specification:

Document Number MRF18085A Freescale Semiconductor Rev. 8, 10/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/ cellular radio and WLL applications. 1805 -1880 MHz, 85 W, 26 V GSM and GSM EDGE Performance @ 1880 MHz Power Gain - 15 dB (Typ) @ 85 Watts CW GSM/GSM EDGE Efficiency - 52% (Typ) @ 85 Watts CW LATERAL N-CHANNEL Capable of Handling 5 1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW RF POWER MOSFET Output Power Features Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 mrf18085a.pdf Design, MOSFET, Power

 mrf18085a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mrf18085a.pdf Database, Innovation, IC, Electricity