View 2sk3876-01r detailed specification:
2SK3876-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 900 V VDSX 900 V VGS=-30V Equivalent circuit schematic Continuous Drain Current ID 13 A Pulsed Drain Current ID(puls] 52 A Drain(D) Gate-Source Voltage VGS 30 V Non-Repetitive Note *1 Maximum Avalanche current IAS 13 A Repetitive Gate(G) Maximum Avalanche current IAR 6.5 A Source(S) Non-Repetitive EAS 1006 mJ Note *2 Maximum Avalanche Energy ... See More ⇒
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2sk3876-01r.pdf Design, MOSFET, Power
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