View gt52n10t detailed specification:
GOFORD GT52N10T N-Channel Enhancement Mode Power MOSFET Description The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V) ... See More ⇒
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gt52n10t.pdf Design, MOSFET, Power
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