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gt52n10tgt52n10t

GOFORDGT52N10TN-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10T uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)

 

Keywords - ALL TRANSISTORS DATASHEET

 gt52n10t.pdf Design, MOSFET, Power

 gt52n10t.pdf RoHS Compliant, Service, Triacs, Semiconductor

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