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View hgtg40n60b3 detailed specification:

S E M I C O N D U C T O R HGTG40N60B3 PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 70A, 600V at TC = +25oC E Square Switching SOA Capability C G Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction Loss Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a Terminal Diagram MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only N-CHANNEL ENHANCEMENT MODE moderately between +25oC and +150oC. The IGBT is ideal for many high voltage switching C applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and dri... See More ⇒

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