All Transistors. Equivalents Search

View irf640 irf641 irf642 irf643 rf1s640 detailed specification:

IRF640, IRF641, IRF642, S E M I C O N D U C T O R IRF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22 MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode Single Pulse Avalanche Energy Rated of operation. All of these power MOSFETs are designed for SOA is Power Dissipation Limited applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power Nanosecond Switching Speed bipolar switching transistors requiring high speed and low Linear Transfer Characteristics gate drive power. These t... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irf640 irf641 irf642 irf643 rf1s640.pdf Design, MOSFET, Power

 irf640 irf641 irf642 irf643 rf1s640.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf640 irf641 irf642 irf643 rf1s640.pdf Database, Innovation, IC, Electricity