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View 2sd1306 detailed specification:

2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 30 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 15 V IC = 1 mA, RBE = voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 1.0 A VCB = 20 ... See More ⇒

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