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2SD2213 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 15 k 0.5 2. Collector (Typ) (Typ) 1 3. Base 3 2 1 2SD2213 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 8V Collector current IC 1.5 A Collector peak current ic (peak) 3A Collector power dissipation PC 0.9 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C E to C diode forward current ID 1.5 A Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 150 V IC = 1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 80 V IC = 10 mA, RBE = voltage Emitter to base breakdown V(BR)EBO 8 V... See More ⇒

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