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View 2sd2491 2sd2492 detailed specification:

2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features Isolated package TO-126FM Outline TO-126FM 1. Emitter 2. Collector 3. Base 1 2 3 2SD2491, 2SD2492 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD2491 2SD2492 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Collector power dissipation PC 1.35 1.35 W Collector power dissipation PC*1 88W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Note 1. Value at TC = 25 C Electrical Characteristics (Ta = 25 C) 2SD2491 2SD2492 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 160 200 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR... See More ⇒

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