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2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 1. Drain 2. Source 2 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage VGDO 15 V Gate to source voltage VGSO 15 V Drain current ID 50 mA Gate current IG 5mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Gate to drain breakdown V(BR)GDO 15 V IG = 100 A voltage Gate to source breakdown V(BR)GSO 15 V IG = 100 A voltage Gate cutoff current IGSS 10 nA VGS = 7 V, VDS = 0 Drain current IDSS*1 5 50 mA VDS = 5 V, VGS = 0 (pulse) Gate to source cutoff voltage VGS(off) 3.0 V VDS = 5 V, ID = 100 A Forward t... See More ⇒

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