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2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 (Z) 1st. Edition Mar. 2001 Features Low on-resistance RDS(on) = 1.1 typ. Low leakage current IDSS = 1 A max (at VDS = 500 V) High speed switching tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings Outline TO 220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK3233 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 5A Drain peak current ID (pulse) Note1 20 A Body-drain diode reverse drain IDR 5A current Body-drain diode reverse drain peak IDR (pulse) Note1 20 A current Avalanche current IAP Note3 5A Channel dissipation Pch Note2 30 W Channel to case Tehrmal ... See More ⇒

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