All Transistors. Equivalents Search

View 2sc3356 detailed specification:

2SC3356 TRANSISTOR (NPN) FEATURES SOT-23 / SOT-23-3L Power dissipation PCM 0.2 W (Tamb=25 ) Collector current 1. BASE ICM 0.1 A 2. EMITTER Collector-base voltage 3. COLLECTOR V(BR)CBO 20 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 20 V (BR)CBO Ic=10 A, I =0 E Collector-emitter breakdown voltage V Ic= 1mA, I =0 12 V (BR)CEO B Emitter-base breakdown voltage V(BR)EBO 3 V I = 10 A, I =0 E C Collector cut-off current I V = 10 V, I =0 1 CBO CB E A Emitter cut-off current I V = 1V , I =0 1 EBO EB C A DC current gain hFE VCE= 10V, IC= 20mA 50 250 V =10V, I = 20mA 7 GHz GHz Transition frequency f CE C T Noise figure NF V =10V, I = 7mA, f ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sc3356.pdf Design, MOSFET, Power

 2sc3356.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc3356.pdf Database, Innovation, IC, Electricity