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View 2n3226 detailed specification:

isc Silicon NPN Power Transistor 2N3226 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% test Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 35 V CBO V Collector-Emitter Voltage 35 V CER V Collector-Emitter Voltage 35 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 5 A C P Collector Power Dissipation@T =25 75 W C C Operating and Storage Junction T T -65 +150 J, stg Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.17 /W th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Po... See More ⇒

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