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isc Silicon PNP Power Transistor 2N3789 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -7 V EBO I Collector Current-Continuous -10 A C P Collector Power Dissipation@T =25 150 W C C T Junction Temperature -65 200 J Storage Temperature -65 200 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.17 /W th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N37... See More ⇒

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