View 2n6053 2n6054 detailed specification:

2n6053_2n60542n6053_2n6054

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION With TO-3 package Low collector saturation voltage DARLINGTON Complement to type 2N6055;2N6056 APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6053 -60 VCBO Collector-base voltage Open emitter V 2N6054 -80 2N6053 -60 VCEO Collector-emitter voltage Open base V 2N6054 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A ICM Collector current-peak -16 A IB Base current -120 mA PD Total Power Dissipation TC=25 100 W Junction temperature 200 Tj Storage temperature -65 200 Tst... See More ⇒

 

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