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View 2sa1010 detailed specification:

isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SC2334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -7.0 V EBO I Collector Current-Continuous -7.0 A C I Collector Current-Peak -15 A CM I Base Current-Continuous -3.5 A B Collector Power Dissipation 1.5 @ T =25 a P W C Collector Power Dissipation 40 @ T =25 C T Junction Temperature 150 J Storage Temperature Range ... See More ⇒

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