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View 2sa1011 detailed specification:

sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Typ.)@ I = -0.5A CE(sat) C Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Complement to Type 2SC2344 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emitter Voltage -160 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current-Continuous -1.5 A C I Collector Current-Peak -3.0 A CM P Total Power Dissipation@ T =25 25 W C C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademar... See More ⇒

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