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View 2sa1012-d detailed specification:

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -3A CE(sat) C High Switching Speed TO-252 Package -D = Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO PARAMETER VALUE UNIT L V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -5 A C Total Power Dissipation P 20 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V Collector-Emitter Breakdown Voltage I = -10mA ; I = 0 -50 V (B... See More ⇒

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