All Transistors. Equivalents Search

View 2sa1012 detailed specification:

isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC2562 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -5 A C Total Power Dissipation P 20 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1012 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C S... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sa1012.pdf Design, MOSFET, Power

 2sa1012.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1012.pdf Database, Innovation, IC, Electricity