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View 2sa1013 detailed specification:

INCHANGE Semiconductor isc Silicon PNP Transistor 2SA1013 DESCRIPTION High Voltage and High Current Vceo=-160V(Min. Excellent hFE Linearity Low Noise Complement to Type 2SC2383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -160 V CEO V Emitter-Base Voltage -6 V EBO I Collector Curren -1 A C I Base Curren -500 mA B Collector Power Dissipation P 900 mW C @T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Transistor 2SA1013 ELECTRICAL CHARACTER... See More ⇒

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