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View 2sa1015 detailed specification:

isc Silicon PNP Transistor 2SA1015 DESCRIPTION High Voltage and High Current Vceo=-50V(Min. Ic=-150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SC1815 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Curren -150 mA C I Base Curren -50 mA B Collector Power Dissipation P 400 mW C @T =25 C T Junction Temperature 125 J Storage Temperature Range -55 125 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Transistor 2SA1015 ELECTRICAL CHARACTERIS... See More ⇒

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