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View 2sa1094 detailed specification:

isc Silicon PNP Power Transistor 2SA1094 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2564 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 80W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -140 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -12 A C I Emitter Current-Continuous 12 A E Collector Power Dissipation P 120 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1094... See More ⇒

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