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View 2sa1095 detailed specification:

isc Silicon PNP Power Transistor 2SA1095 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2565 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -160 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -15 A C I Emitter Current-Continuous 15 A E Collector Power Dissipation P 150 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA109... See More ⇒

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