All Transistors. Equivalents Search

View 2sa1096 detailed specification:

isc Silicon PNP Power Transistor 2SA1096 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -50V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2497 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -2 A C I Collector Current-Peak -3 A CM Collector Power Dissipation 1.2 @ T =25 a P W C Total Power Dissipation 5 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1096 ELECTRICAL CHARAC... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sa1096.pdf Design, MOSFET, Power

 2sa1096.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1096.pdf Database, Innovation, IC, Electricity