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View 2sa2004 detailed specification:

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2004 DESCRIPTION Silicon PNP epitaxial planner type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -8 A C I Base Current-Continuous -1 A B Collector Power Dissipation P 20 W c @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg isc website www.iscsemi.com isc & iscsemi is registered trademark NCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA2004 ELECTRICAL CHARACTERISTICS T =... See More ⇒

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