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isc Silicon PNP Power Transistor 2SA473 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC1173 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Car radio and car stereo output stage applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -3 A C I Emitter Current-Continuous -3.0 A E Total Power Dissipation P 10 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA473 ELECTRICAL CHARACTERISTICS ... See More ⇒

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