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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA562 DESCRIPTION Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -35 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -0.5 A C P Collector Power Dissipation @T =25 0.5 W C C T Junction Temperature 150 J Storage Temperature -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA562 ELECTRICAL CHARACTERISTICS T =25 unless otherwis... See More ⇒

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