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View 2sb1186 detailed specification:

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SD1763 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -120 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -1.5 A C I Collector Current-Peak -3 A CM Collector Power Dissipation 2 @ T =25 a P W C Collector Power Dissipation 20 @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark ... See More ⇒

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