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View 2sc2750 detailed specification:

isc Silicon NPN Power Transistor 2SC2750 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High Current Capability High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C I Collector Current-Peak 30 A CM I Base Current-Continuous 5 A B Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2750 ELEC... See More ⇒

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