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View 2sc2752 detailed specification:

isc Silicon NPN Power Transistor 2SC2752 DESCRIPTION High breakdown voltage Complementary to 2SA1156 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V 500 V CER Collector-Emitter Voltage R =150 BE V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 0.5 A C Collector Power Dissipation P 10 W C @ Tc=25 T Junction Temperature -55 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2752 ELECTRICAL CHARACT... See More ⇒

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