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View 2sc4226 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4226 DESCRIPTION Low Collector Curren -I = 0.1A C Low Collector Power Pc=0.1W With SOT-323 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emitter Voltage 12 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current-Continuous 100 mA C Collector Power Dissipation Pc 100 mW @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65--150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4226 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARA... See More ⇒

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