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View 2sd1506 detailed specification:

isc Silicon NPN Power Transistor 2SD1506 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 3 A C I Collector Current-Peak 4.5 A CM Total Power Dissipation 1.2 @ T =25 a P W C Total Power Dissipation 10 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1506 ELECT... See More ⇒

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