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View 2sd1655 detailed specification:

isc Silicon NPN Power Transistor 2SD1655 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current- Continuous 5 A C I Collector Current-Pulse 16 A CP Collector Power Dissipation P 60 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1655 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER ... See More ⇒

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