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View 2sd1691 detailed specification:

isc Silicon NPN Power Transistor 2SD1691 DESCRIPTION High Collector Current -I = 5A C Low Collector Saturation Voltage V = 0.3V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1151 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 5 A C I Collector Current-Pulse 8 A CP I Base Current-Continuous 1 A B Collector Power Dissipation 20 @ T =25 C P W C Collector Power Dissipation 1.3 @ T =25 a T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registe... See More ⇒

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