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View 2sd2495 detailed specification:

isc Silicon NPN Darlington Power Transistor 2SD2495 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1626 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 110 V CBO V Collector-Emitter Voltage 110 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 6 A C I Base Current-Continuous 1 A B Collector Power Dissipation P 30 W C @T =25 C T Junction Temperature 150 J T Storage Temperature -55 150 stg 1 isc website www.i... See More ⇒

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