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View 2sd311 detailed specification:

isc Silicon NPN Power Transistor 2SD311 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 15 A C I Base Current-Continuous 6 A B Collector Power Dissipation P 150 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -65 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.0 /W th j-c isc website www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Po... See More ⇒

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