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View 2sd312 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD312 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 600V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 0.5 A C I Collector Current-Peak 1 A CM Collector Power Dissipation P 25 W C @T =100 C T Junction Temperature 150 j T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor i... See More ⇒

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