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View 2sd318 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD318 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 3.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current-Continuous 3.0 A C I Collector Current-Peak 5.0 A CM Collector Power Dissipation 1.5 @ T =25 a P W C Collector Power Dissipation 25 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UN... See More ⇒

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