View 3da77 detailed specification:

3da773da77

isc Silicon NPN Power Transistor 3DA77 DESCRIPTION High DC Current Gain h = 10(MAX)@I = 1.5A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 70 V CEO V Emitter-Base Voltage 1 V EBO I Collector Current-Continuous 5.0 A C P Collector Power Dissipation@T =75 40 W C C T Junction Temperature 175 J Storage Temperature Range -55-175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.25 /W th j-c isc website www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 3DA77 ELECTRICAL CHARACTERISTICS T =25 unless o... See More ⇒

 

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