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View bd241 bd241a bd241b bd241c detailed specification:

isc Silicon NPN Power Transistor BD241/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BD241; 60V(Min)- BD241A CEO(SUS) 80V(Min)- BD241B; 100V(Min)- BD241C Complement to Type BD242/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT BD241 55 BD241A 70 V Collector-Base Voltage V CBO BD241B 90 BD241C 115 BD241 45 BD241A 60 Collector-Emitter V V CEO Voltage BD241B 80 BD241C 100 V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 3.0 A C I Collector Current-Peak 5.0 A CM I Base Current 1.0 A B Collector Power Dissipation P 40 W C @ T =25 C T Junction Temperature 150... See More ⇒

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