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View bdx33 detailed specification:

isc Silicon NPN Darlington Power Transistor BDX33 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 45V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = 4A FE C Low Collector Saturation Voltage V = 2.5V(Max.)@ I = 4A CE(sat) C Complement to Type BDX34 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 45 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 10 A C I Collector Current-Peak 15 A CM I Base Current-Continuous 0.25 A B Collector Power Dissipation P 70 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg THERM... See More ⇒

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