View bdx33b detailed specification:
isc Silicon NPN Darlington Power Transistor BDX33B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = 3A FE C Low Collector Saturation Voltage V = 2.5V(Max.)@ I = 3A CE(sat) C Complement to Type BDX34B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 10 A C I Collector Current-Peak 15 A CM I Base Current-Continuous 0.25 A B Collector Power Dissipation P 70 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg THE... See More ⇒
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bdx33b.pdf Design, MOSFET, Power
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