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View bu508 detailed specification:

isc Silicon NPN Power Transistor BU508 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V CES BE V Collector-Emitter Voltage 700 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current- Continuous 8 A C I Collector Current-Peak 15 A CM I Base Current- Continuous 4 A B I Base Current-Peak 6 A BM Collector Power Dissipation P 125 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.0 /W th j-c 1 i... See More ⇒

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