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View bu508dfi detailed specification:

isc Silicon NPN Power Transistor BU508DFI DESCRIPTION High Voltage-V = 1500V(Min.) CES Collector Current- I = 8.0A C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 1500 V CES V Collector-Emitter Voltage 700 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current-Continuous 8.0 A C I Collector Current-Peak 15 A CM Collector Power Dissipation P 50 W C @T =25 C T Junction Temperature 150 J T Storage Temperature -65 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 2.5 /W th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silico... See More ⇒

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