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View bu508dr detailed specification:

isc Silicon NPN Power Transistor BU508DR DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 1500 V CES V Collector-Emitter Voltage 700 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 8.0 A C I Collector Current-Peak 15 A CM I Base Current-Continuous 4 A B I Base Current-Peak 6 A BM Collector Power Dissipation P 125 W C @T =25 C T Junction Temperature 150 J Storage Temperature -65 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.0 /W th j-c 1 isc we... See More ⇒

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